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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION With TO-3PN package High DC current gain. Large current capacity and wide ASO. Low saturation voltage. DARLINGTON APPLICATIONS Motor drivers, printer Hammer drivers Relay drivers, Voltage regulator control PINNING PIN 1 2 3 Base Collector;connected to mounting base DESCRIPTION 2SB887 Emitter PARAMETER Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings(Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg HAN INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak SEM GE Open base OND IC TOR UC VALUE -110 -100 -6 -10 -15 CONDITIONS UNIT V V V A A W ae ae Open emitter Open collector Collector power dissipation Junction temperature Storage temperature TC=25ae 70 150 -55~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SB887 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-50mA ;RBE= IC=-5mA ;IE=0 IC=-5A; IB=-10mA IC=-5A; IB=-10mA VCB=-80V; IE=0 VEB=-5V; IC=0 IC=-5A ; VCE=-3V IC=-5A ; VCE=-5V 1500 4000 20 MIN -100 -110 -1.0 -1.5 -2.0 -0.1 -3.0 TYP. MAX UNIT V V V V mA mA SYMBOL V(BR)CEO V(BR)CBO VCEsat VBEsat ICBO IEBO hFE fT Transition frequency HAN INC SEM GE OND IC TOR UC MHz 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SB887 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions 3 |
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